home *** CD-ROM | disk | FTP | other *** search
- Path: sparky!uunet!gatech!rutgers!igor.rutgers.edu!planchet.rutgers.edu!nanotech
- From: doom@leland.Stanford.EDU (Joseph Brenner)
- Newsgroups: sci.nanotech
- Subject: Re: Bootstrapping Nanotech
- Message-ID: <Aug.14.00.09.37.1992.349@planchet.rutgers.edu>
- Date: 14 Aug 92 04:09:38 GMT
- Sender: nanotech@planchet.rutgers.edu
- Lines: 46
- Approved: nanotech@aramis.rutgers.edu
-
- forrest@cup.portal.com writes:
-
- >Suppose that you had a working assembler arm and you wanted to
- >build diamond. As you add each C atom to the structure, how could
- >you insure that the bond is an sp3 hybrid bond? Any of the other
- >C-C type bonds will not give you the 109.5 degree bonds that you
- >need for the diamond lattice. Any ideas?
-
- Just off of the top of my head, I believe the folks doing things
- like CVD (chemical vapor deposition) of diamond films have soved
- this problem. They include enough hydrogen in the carrier gas so
- that the bonds at the growth interface are temporarily terminated
- by hydrogen. The hydrogens have to be displaced somehow by each
- carbon atom that attaches itself to the surface.
-
- Of course, the diamond deposition guys tend to grow some pretty
- ugly films... they seem happy if they can get a film that's
- *mostly* diamond in the from of 10 micron crystals randomly
- scattered around. Of course, they're usually trying to do
- something fairly difficult: heteroepitaxial growth, e.g. putting
- a layer of diamond onto a silicon substrate. I've heard some
- claims about homoepitaxy being a solved problem (supposedly they
- can put a smooth layer of diamond down on top of diamond), but
- I've also heard that these claims may be a bit bogus.
-
- Anyway, this isn't really my field, I just wanted to suggest that
- if you want to know about how to make diamond, you might want to
- read up on the stuff written by people actually doing it...
-
- I did a quick literature search ("FIND SU DIAMOND AND SU
- DEPOSITION AND TI REVIEW"), and I might suggest starting with:
-
- Savage, J.A. "Preparation and properties of hard crystalline
- materials for optical applications-a review." JOURNAL OF CRYSTAL
- GROWTH (Sept. 1991) vol.113, no.3-4, p. 698-715.
-
- or
-
- Davis, R.F., et al. "A review of the status of diamond and
- silicon carbide devices for high-power, -temperature, and
- -frequency applications." INTERNATIONAL ELECTRON DEVICES MEETING
- 1990. TECHNICAL DIGEST (CAT. NO.90CH2865-4). Held: San
- Francisco, CA, USA, 9-12 Dec. 1990. (USA: IEEE, 1990. p. 785-8)
-
- (If anyone is really serious about this, let me know. I know
- someone I could bug to find some good references.)
-