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- From: rene@socrates.et.tudelft.nl (Rene Bodenstaff)
- Subject: Re: alpha chip
- Message-ID: <1992Nov18.195738.5940@donau.et.tudelft.nl>
- Sender: news@donau.et.tudelft.nl (UseNet News System)
- Nntp-Posting-Host: socrates.et.tudelft.nl
- Organization: Delft University of Technology, Dept. of Electrical Engineering
- References: <1992Nov11.175742.12884@risky.ecs.umass.edu>
- Date: Wed, 18 Nov 1992 19:57:38 GMT
- Lines: 52
-
- In article <1992Nov11.175742.12884@risky.ecs.umass.edu>, obiliset@duke.ecs.umass.edu (Sashi V Obilisetty) writes:
- > I guess the best way to ensure that there is no skew is to have
- > one big buffer, and then have lines from this driver feeding all
- > other modules requiring clocks. What I am concerned about is the
- > amount of heat/power dissipation that would occur due to this big
- > driver.
- > Won't it create a hot spot on the chip? The power supply is 3.3V,
- > is this the reason why it works?
-
- When looking at the micro photograph taken from the Alpha
- (SC-27, nov. 1992, p.1556), it is clear that the buffer is
- not just a small sub-circuit, it takes about 10% of the
- total active area of the chip. So the clock generator wouldn't
- cause a hot _spot_, but a less hot _region_.
-
- >
- > Also, the chip is designed using 0.75um process with min. channel
- > lengths of 0.5um. How can we have long lines running in this technology?
- > Wouldn't the transmission line effects become prominent at this point,
- > and therefore it makes sense to use distributed driving??
-
- The transmission line effect is most of significance when dealing
- with high-resistive wires, like poly-silicide. However, the
- Alpha people used metal for interconnection, quote:
-
- "Metal 3 is very thick and has relatively large pitch. It is
- important at these speeds to have a low-resistance metal
- layer available for power and clock distribution."
-
- Some figures. I'm using an 1.6u CMOS technology, with
- the following sheet resistance for the various layers (typical):
-
- metal 1 : 45 milli_ohm/square
- metal 2 : 30 milli_ohm/square
- poly silicon : 25 ohm/square
-
- >
- > Will be glad if someone would clear these doubts.
- > Thank You.
- >
- > Sashi
-
- /*
- Rene Bodenstaff
- Delft University of Technology
- The Netherlands
-
- e-mail: rene@hal.et.tudelft.nl
- wodka@dutentc.et.tudelft.nl
-
- -------------------- Everybody, let's MOVE !! ------------------------
- */
-