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- .subckt ind_3F3_48 P1 P2 params:
- + N 10
- + Ae 31e-6
- + Le 47e-3
- + Ue 48
- L1 NN1 P2 1
- F1 P2 NN1 B1 1
- * perm of free space
- .param u0 1.25663e-6
- * material dependent
- .param ui 48
- .param winding_scale {N*Ae/Le*N*u0*ue/ui}
- .param Ue_scale {N*ue/ui/Le}
- B1 P1 P2 V=
- + table[
- + -9120.11, 1.46015,
- + -8317.64, 1.93354,
- + -7585.78, 2.62101,
- + -6918.31, 3.65418,
- + -6309.57, 5.26414,
- + -5754.4, 7.84991,
- + -5248.07, 12.0187,
- + -4786.3, 18.3176,
- + -4365.16, 26.2719,
- + -3981.07, 33.8899,
- + -3630.78, 39.486,
- + -3311.31, 43.0071,
- + -3019.95, 45.13,
- + -2754.23, 46.4319,
- + -2511.89, 47.2656,
- + -2290.87, 47.871,
- + -2089.3, 48.2242,
- + -1905.46, 48.3996,
- + -1737.8, 48.5047,
- + -1584.89, 48.573,
- + -1445.44, 48.6197,
- + -1318.26, 48.6524,
- + -1202.26, 48.676,
- + -1096.48, 48.692,
- + -1000, 48.7038,
- + -912.011, 48.7119,
- + -831.764, 48.7169,
- + -1, 48.7179,
- + 1, 48.7179,
- + 831.764, 48.7169,
- + 912.011, 48.7119,
- + 1000, 48.7038,
- + 1096.48, 48.692,
- + 1202.26, 48.676,
- + 1318.26, 48.6524,
- + 1445.44, 48.6197,
- + 1584.89, 48.573,
- + 1737.8, 48.5047,
- + 1905.46, 48.3996,
- + 2089.3, 48.2242,
- + 2290.87, 47.871,
- + 2511.89, 47.2656,
- + 2754.23, 46.4319,
- + 3019.95, 45.13,
- + 3311.31, 43.0071,
- + 3630.78, 39.486,
- + 3981.07, 33.8899,
- + 4365.16, 26.2719,
- + 4786.3, 18.3176,
- + 5248.07, 12.0187,
- + 5754.4, 7.84991,
- + 6309.57, 5.26414,
- + 6918.31, 3.65418,
- + 7585.78, 2.62101,
- + 8317.64, 1.93354,
- + 9120.11, 1.46015]
- + (i(b1)*Ue_scale) * v(NN1,p2) * winding_scale
- .ends
-
- .subckt IRF7501 D G S
- .model mosfet NMOS( LEVEL=7 VTO=1.477 RS=0.03836 KP=16.341 RD=0.0494 TC1RD=0.0078 RG=35.321 IS=1e-36
- + CGDMAX=8.75E-10 CGDMIN=2.00E-11 XG2CGD=0.47 XG1CGD=0.1 CBD=7.50E-11 VTCGD=1)
- .model diode D( IS=6.94e-13 RS=0.0584 TT=7.243e-08)
- M1 D G S S mosfet
- D1 S D Diode
- Cgs G S 2.02E-10
- .ends
-
- .model murd310 d(is=240f rs=22m cjo=130p m=0.35 vj=0.75 isr=3.5n
- + bv=100 ibv=100u tt=55n)
-