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- Newsgroups: rec.audio
- Path: sparky!uunet!utcsri!torn!watserv2.uwaterloo.ca!watserv1!sail.uwaterloo.ca!wkung
- From: wkung@sail.uwaterloo.ca (Bill Kung)
- Subject: Re: PNP vs NPN Output Stages
- Message-ID: <BxnwEJ.EJo@watserv1.uwaterloo.ca>
- Keywords: Lock
- Sender: news@watserv1.uwaterloo.ca
- Organization: University of Waterloo
- References: <184200@pyramid.pyramid.com> <BxIFyv.6rx@watserv1.uwaterloo.ca> <19153@ucdavis.ucdavis.edu>
- Date: Fri, 13 Nov 1992 15:59:06 GMT
- Lines: 8
-
- Maybe I should have sounded a little bit more assertive, although I still
- might not know what I'm talking about. I routinely measure noise in P-channel
- and N-channel MOSFETs (discrete devices) and PNP and NPN bipolar transistors
- (discrete devices). I know for a fact that a PNP transistor will have a
- lower input-referred 1/f noise value than a comparable NPN transistor. 1/f
- noise has been adequately described by mobility-fluctuation models and
- resistance-fluctuation models. As to base spreading resistance, that can
- usually be tailored by the process.
-