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- Path: sparky!uunet!spool.mu.edu!vms.csd.mu.edu!5916RAHMANK
- From: 5916rahmank@vms.csd.mu.edu
- Newsgroups: sci.materials
- Subject: Re: Ohmic contacts to n-type silicon
- Date: Tue, 08 Sep 1992 18:10:47 GMT
- Organization: Marquette University - Computer Services
- Lines: 23
- Message-ID: <009604EF.CC3C5800@vms.csd.mu.edu>
- References: <1992Sep7.153215.8703@vax.oxford.ac.uk>
- Reply-To: 5916rahmank@vms.csd.mu.edu
- NNTP-Posting-Host: vmsa.csd.mu.edu
-
- In article <1992Sep7.153215.8703@vax.oxford.ac.uk>, atmdcc@vax.oxford.ac.uk
- writes:
- |>Does anyone know of a good method of making an ohmic contact to n-type
- >silicon?
- |>
- |>What I'm looking for is a simple evaporation/ sputtering technique to
- |>deposit a
- |>metal or alloy down onto the silicon which avoids the unnecessary complication
- |>of having to selectively dope a particular region. The metal-semiconductor
- |>should not form a diode and the metal should adhere properly.
- |>
- |>I've looked at some literature and whilst there's plenty of theoretical info
- |>about energy bands, Fermi levels, and so on, there's scant detail of what you
- |>do in practice.
- |>--
- |>................................................................................
- |> David Catling [Tel:+44 865 272927 Fax:+44 865 272923]
-
- We have used AuPd and Pt target to sputter contact pad on SnO2 and found
- good results. I'm not sure if these metals produce non-ohmic contact
- with Si. You might wanna look into Ben Streetman, and Heinz Henisch.
-
- -K. M. A. Rahman.
-