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- Newsgroups: sci.materials
- Path: sparky!uunet!elroy.jpl.nasa.gov!decwrl!concert!rti!jbp
- From: jbp@rti.rti.org
- Subject: Re: Gallium Nitride in cubic form?
- Message-ID: <1992Aug23.170021.812@rti.rti.org>
- Organization: Research Triangle Institute, RTP, NC
- Date: Sun, 23 Aug 92 17:00:21 GMT
- Lines: 34
-
- In article <+40m-xm@lynx.unm.edu> Swami srinivasan writes:
- > Here's my question - is there a way to find a suitable
- >substrate or growing conditions whereby GaN can be grown cubic? If
- >there are any references, please do send me the information. BTW,
- >the reason i ask is that i recall someone having said that it was
- >possible.
-
- Cubic GaN has been grown on beta-SiC (1) and basal plane sapphire (2).
- (1) M.J. Paisley, Z. Sitar, J.B. Posthill, and R.F. Davis, ``Growth of
- Cubic Phase Gallium Nitride by Gas Source Molecular Beam Epitaxy'',
- Journal of Vacuum Science and Technology A, vol. 7 (1989) 701.
-
- (2) T.P. Humphreys, C.A. Sukow, R.J. Nemanich, J.B. Posthill, R.A.
- Rudder, S.V. Hattangady, and R.J. Markunas, ``Microstructural and
- Optical Characterization of GaN Films Grown by PECVD on (0001)
- Sapphire Substrates'', Materials Research Society Symposium
- Proceedings, vol. 162 (1990) 531.
-
- There have been a couple of reviews of the wide-band-gap nitride field
- recently, and I recommend:
- S. Strite and H. Morkoc, J. Vac. Sci. Technol. B, 10(4), July/Aug 1992,
- pp. 1237-1266. That ought to get you started.
-
- >Are there any better substrates than Sapphire, which is the most
- >common one?
-
- Depends on exactly what you want grow and what technologies that you
- have for cleaning the substrates and growing the films. Lattice matching
- is only one of several important factors required for ``good''
- heteroepitaxial film growth. In short, there is no simple answer to your
- question. We must resort to the ubiquitous phrase, ``further research
- is required''. Hope that helps.
- --
- John Posthill jbp@rti.rti.org
-