home *** CD-ROM | disk | FTP | other *** search
- Path: sparky!uunet!zaphod.mps.ohio-state.edu!uwm.edu!ogicse!news.u.washington.edu!milton.u.washington.edu!slovell
- From: slovell@milton.u.washington.edu (Sherman Lovell)
- Newsgroups: rec.radio.amateur,sci.electronics
- Subject: IRF 511 as RF Power Amp
- Message-ID: <1992Dec13.041936.15826@u.washington.edu>
- Date: 13 Dec 92 04:19:36 GMT
- Article-I.D.: u.1992Dec13.041936.15826
- Sender: news@u.washington.edu (USENET News System)
- Reply-To: slovell@u.washington.edu
- Organization: University of Washington, Seattle
- Lines: 24
-
-
-
- In the April '89 QST Doug DeMaw wrote about using
- the IRF 511 Mosfet as a RF Power amplifier. Wes Hayward then
- wrote an excellent follow-up article in the Nov '89 QST. I'm
- wondering if anyone has experimented with these transistors and
- circuits. Specifically, I'm puzzled by the fact that neither
- DeMaw nor Hayward seems to have run into trouble with these
- transistors' considerable input capacitance -- the 511 has about
- 100 pF and the IRF 530 that Hayward used has about 900pF!
- When I build the circuits in these articles this capacitance looks
- like a .001 uF shunt across the input. Even the 511's lower input
- C is hardly insignificant -- it looks like 150 ohms Xc at 7 MHz. Is
- there something I'm missing here? Hayward and DeMaw
- blithely put a 50 ohm resistance across the input, or a 200 ohm
- one with a 4:1 transformer and seem to have no problems.
- When I do the same thing my little QRP rig sees the 50 ohms in
- parallel with a big capacitive shunt, producing something far
- from 1:1 input swr.
- Also, any thoughts, anecdotes, or suggestions regarding
- these transistors' tendency toward self-destruction from static
- electricity, too high Vgs, and parasitic oscillations?
- Thanks for your help.
- Sherm Lovell, WY7F
-