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- Path: sparky!uunet!olivea!decwrl!mips!darwin.sura.net!jvnc.net!nuscc!ntuix!eoahmad
- From: eoahmad@ntuix.ntu.ac.sg (Othman Ahmad)
- Newsgroups: comp.arch
- Subject: Re: Cached DRAM from Mitsubishi
- Message-ID: <1992Jul30.142857.10787@ntuix.ntu.ac.sg>
- Date: 30 Jul 92 14:28:57 GMT
- References: <1992Jul30.003907.10654@eng.ufl.edu>
- Organization: Nanyang Technological University - Singapore
- Lines: 34
-
- In article <1992Jul30.003907.10654@eng.ufl.edu> jon@alpha.ee.ufl.edu (Jon Mellott) writes:
-
- :
- : The vital statistics (for the -10 suffix devices) are:
- : 1) Cache Hit Access/Cycle = 10ns/10ns
-
- At this speed, we start questioning the need for internal caches in Alpha and
- P5. Even with 128 pins for Alpha, it cannot beat the 16 data width for
- each output bit of the DRAM cache. This is just the beginning.
- The question is, what sort of technology is used to bring static and
- DRAM technology together? Will it ever be cheaply mass produced?
- Instead of 4 bit wide data per chip, when will they put 16-bit wide
- packages on the standard(JEDEC?) 40-pin packages.
-
- I wish that someone more knowledgeable could contribute.
-
- : 2) Cache Miss Access/Cycle = 70ns/280ns *
-
- After 16 write cycles of 10nS each, it must be followed by a 70nS cycle.
- However if there is a backward jump to the previous bank, the cycle time
- would be 280nS. I am cloudy here.
- I thought that caches are good only for random access. Here is an
- example of cache optimised for sequential access. I agree that sequential
- access is the most common for microprocessor.
- : 3) Direct Array Access/Cycle = 70ns/140ns
- This mode is only necessary for completely random accesses.
-
- The above are just my guesses. Anyone can comment on that?
-
- --
- Othman bin Ahmad, School of EEE,
- Nanyang Technological University, Singapore 2263.
- Internet Email: eoahmad@ntuix.ntu.ac.sg
- Bitnet Email: eoahmad@ntuvax.bitnet
-