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- Resistor
- RXXXX node1 node2 value (in ohms)
-
- Capacitor
- CXXXX node1 node2 value (in farads)
-
- Inductor
- LXXXX node1 node2 value (in henries)
-
- Transformer
- TXXXX +Pri -Pri +Sec -Sec N (turns ratio np/ns)
- Bipolar Transistor
- BXXXX Base Emitter Collector Beta Rbe (in ohms)
-
- Field Effect Transistor
- FXXXX Gate Source Drain Transconductance (in mhos)
-
- Opamp
- OXXXX +Input -Input Output Gain Rout (in ohms)
-
- Transconductance Amplifier
- GXXXX +Input -Input +Output -Output Gm. (in mhos)
- Output Format Statement
- P In Out Low-Freq. High-Freq. Plot-Mode (LIN or LOG)
-
- Element Values
-
- Values may be integer, floating point, scientific
- notation or either an integer or floating point
- number followed by one of these scale factors:
-
- P=1E-12 N=1E-9 U=1E-6 M=1E-3
- K=1E3 MEG=1E6 G=1E9
- Node numbers must be integers. Node 0 is always
- reserved for the ground or common connection. Any
- DC power connections should be set to node 0 for
- the purpose of AC analysis.
-
- Examples:
-
- A 1000 ohm resistor connected between nodes 2 and 3
- would be described as :
-
- R1 2 3 1000
- Examples:
-
- A bipolar transistor (NPN or PNP) with the base as
- node 3, the emitter as node 1, and the collector as
- node 4, having a current gain of 100 and a base-
- emitter resistance of 1000 ohms would be described
- as follows:
-
- B 3 1 4 100 1K
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