256K EEPROMs with Parallel Access

SGS-THOMSON Microelectronics has introduced the M28256 and the low voltage M28256-W, 256K EEPROMs. Organized as 32Kx8, these devices are built with a proprietary new technology that is closely related to the company's proven f lash technology, allowing the full byte erasability of EEPROM to be achieved with a substantially smaller cell size than is possible with the technology conventionally used to manufacture EEPROMs.

The high density of the M28256 will be particularly useful to designers of portable telephones, programmable controllers, industrial automation equipment, robotics systems and similar applications where a large amount of flexible, non-volatile memory is required for storing frequently changing system or user data. The new devices offer substantial space and cost reductions by replacing four 64K parallel EEPROMs or expensive battery-backed SRAM by a single device housed in a TSOP28, SO28, PDIP28 or PLCC32 package.

The M28256 operates from a single 5V +/-10% power supply (3V +/-10% for the M28256-W) and is initially available with a typical access time of 150ns, with higher speed versions to be offered later. Other features include a guaranteed erase/write endurance of 100K cycles and comprehensive software data protection facilities to prevent spurious data writes.

SGS-THOMSON Microelectronics is the world's leading supplier of EEPROMs according to Dataquest 1995 rankings. Its product range includes a full range of serial EEPROMs up to 256K (including four bus protocols), parallel EEPROMs up to 256K and dedicated memories for use in smartcards. In addition, the company is developing new application specific products that include EEPROM and flash memories on the same chip.

Top