[ST] Power MOSFETs in Compact Surface Mounting Package

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SGS-THOMSON Microelectronics has introduced a range of low power MOSFETs housed in one of the smallest surface mounting packages currently available, the SOT-223. The STNxNxx devices are n-channel enhancement mode MOSFETs designed to withstand high energy pulses under avalanche mode, making them ideal for application in hard disk drives, DC/DC converters, power supplies and small motor current sensing circuits.

The initial members of the family include the STN2N06, which has a maximum drain-to-source voltage (VDSS) of 60V and a maximum continuous drain current of 2A at 25°C, the low threshold STN2N10L (100V and 2A) and the STN3N06 (60V and 3A). Maximum values of ON resistance (RDS(on)) are 0.15W (STN3N06), 0.25W (STN2N06), and 0.5W (STN2N10L). All devices in the range have a drain-source body diode with fast recovery time, making them highly energy efficient in small motor applications.

The SOT-223 package is a highly compact housing that is compatible with both wave and reflow soldering techniques. The devices are supplied in Tape and Reel format.

The new devices are 100% avalanche tested. Most importantly, these devices are characterised under realistic application operating conditions: Avalanche Current (Iar) is specified and guaranteed at a junction temperature of 100°C as well as at the usual 25°C.

NOTE: Avalanche breakdown, the most important breakdown mode in power MOSFETs, occurs if the electric field in the vicinity of the body-drain junction exceeds a critical value. The sudden avalanche of mobile carriers results in a large increase in the current flowing through the junction. Unless the device can safely dissipate this avalanche current, transient overvoltages may result in device destruction. The avalanche current that can be safely handled decreases as the junction temperature increases, hence the importantance of characterising devices under realistic operating conditions.

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