Keyword Search
 

 

Home

Search Proceedings

About NCSL

Contact Us

Help

View Paper

Session Topic: 4B, Optical Metrology

   

Paper Title: The Effects of UV Radiation on Silicon Detectors

   

Date & Time: TUESDAY, August 6, 2002

 

10:45am - 12:15pm PARALLEL SESSIONS - SESSION 4

   

Speaker: F.R.T. Luna INMETRO

Email: frluna@inmetro.gov.br

   

Relative spectral responsivity measurements of detectors can be made comparing detectors against reference detectors. The radiation source used was a high pressure mercury arc lamp, whose emission lines were selected by a simple grating monochromator from 248 nm to 450 nm spectral range. Spatial uniformity at 365 nm across the test photodiode photosensitive area was also measured. Curious behavior of silicon photodiodes occurs after UV radiation exposure. Sensitive changes and aging process occurs during calibration procedures routine. Some tests on these effects were carried out. The results, laboratory facilities, calibration method are discussed to evaluated uncertainty.

NCSL International © 1996-2002 All Content.
1800 30th Street, Suite 305, Boulder, Colorado 80301-1026
Tel: (303) 440-3339 Fax: (303) 440-3384
info@ncsli.org

CD-ROM produced by X-CD Business Solutions