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View Paper |
Session Topic: 4B, Optical Metrology |
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Paper Title: The Effects of UV Radiation on Silicon Detectors |
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Date & Time: TUESDAY, August 6, 2002 |
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10:45am - 12:15pm PARALLEL SESSIONS - SESSION 4 |
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Speaker: F.R.T. Luna
INMETRO |
Email: frluna@inmetro.gov.br |
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Relative spectral responsivity measurements of detectors can be made comparing detectors against reference detectors. The radiation source used was a high pressure mercury arc lamp, whose emission lines were selected by a simple grating monochromator from 248 nm to 450 nm spectral range. Spatial uniformity at 365 nm across the test photodiode photosensitive area was also measured. Curious behavior of silicon photodiodes occurs after UV radiation exposure. Sensitive changes and aging process occurs during calibration procedures routine. Some tests on these effects were carried out. The results, laboratory facilities, calibration method are discussed to evaluated uncertainty. |
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